US 11,886,119 B2
Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate
Koji Inoue, Ichihara (JP); Takashi Oda, Ichihara (JP); and Keisuke Kawashima, Ichihara (JP)
Assigned to MITSUI CHEMICALS, INC., Tokyo (JP)
Filed by MITSUI CHEMICALS, INC., Tokyo (JP)
Filed on Feb. 13, 2023, as Appl. No. 18/168,261.
Application 18/168,261 is a continuation of application No. 16/617,297, abandoned, previously published as PCT/JP2018/020744, filed on May 30, 2018.
Claims priority of application No. 2017-108506 (JP), filed on May 31, 2017; and application No. 2017-196260 (JP), filed on Oct. 6, 2017.
Prior Publication US 2023/0185195 A1, Jun. 15, 2023
Int. Cl. G03F 7/11 (2006.01); C08G 61/08 (2006.01); C09D 165/00 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01)
CPC G03F 7/11 (2013.01) [C08G 61/08 (2013.01); C09D 165/00 (2013.01); G03F 7/094 (2013.01); G03F 7/168 (2013.01); C08G 2261/228 (2013.01); C08G 2261/3325 (2013.01); C08G 2261/418 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A laminate comprising:
a substrate; and
a resist underlayer film containing a material for forming an underlayer film, which is
formed on one surface of the substrate,
wherein the material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the material comprising:
a cyclic olefin polymer,
wherein a residual film rate of the material for forming an underlayer film which is
measured using the following method 4 is greater than or equal to 50% and less than or equal to 100%,
method 4: a coating film which is formed of the material for forming an underlayer film and has a thickness (α) of greater than or equal to 200 nm and less than or equal to 500 nm is formed on a silicon wafer, the obtained coating film is treated at 200° C. for 10 minutes, immersed in propylene glycol-1-monomethyl ether-2-acetate at 23° C. for 10 minutes, and dried under conditions of 150° C. for 3 minutes, and a remaining solvent in the coating film is removed, and a thickness (β) of the coating film obtained by removing the remaining solvent is measured, and the residual film rate (=β/α×100)(%) is calculated,
wherein a refractive index (n value) of the cyclic olefin polymer at a wavelength of 193 nm which is measured using the following method 2 is greater than or equal to 1.5 and less than or equal to 2.0, method 2: a coating film which is formed of the cyclic olefin polymer and has a thickness of 250 nm is formed on a silicon wafer, and the refractive index (n value) of the obtained coating film at a wavelength of 193 nm is set as the refractive index (n value) of the cyclic olefin polymer,
wherein an extinction coefficient (k value) of the cyclic olefin polymer which is measured using the following method 3 is greater than or equal to 0.0001 and less than or equal to 0.5,
method 3: a coating film which is formed of the cyclic olefin polymer and has a thickness of 250 nm is formed on a silicon wafer, and the extinction coefficient (k value) of the obtained coating film is set as the extinction coefficient (k value) of the cyclic olefin polymer,
wherein a flatness ΔFT of a surface (α) of the resist underlayer film on a side opposite to the substrate which is calculated using the following equation is greater than or equal to 0% and less than or equal to 5%,
flatness(ΔFT)=[(Hmax−Hmin)/Hav]×100(%)
where film thicknesses of the resist underlayer film are measured in ten optional sites of the surface (α), an average value of these measured values is set as Hav, a maximum value in the film thicknesses of the resist underlayer film is set as Hmax, and a minimum value in the film thicknesses of the resist underlayer film is set as Hmin,
wherein a content of a crosslinking agent in the material for forming an underlayer film is less than 5 parts by mass in a case where a total content of polymer components contained in the material for forming an underlayer film is set to 100 parts by mass.