US 11,886,019 B2
Method of forming photonics structures
Gurtej Sandhu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 29, 2022, as Appl. No. 17/816,336.
Application 17/816,336 is a continuation of application No. 16/926,490, filed on Jul. 10, 2020, granted, now 11,402,590.
Application 16/926,490 is a continuation of application No. 16/015,778, filed on Jun. 22, 2018, granted, now 10,761,275, issued on Aug. 12, 2020.
Application 16/015,778 is a continuation of application No. 13/600,779, filed on Aug. 31, 2012, granted, now 10,094,988, issued on Oct. 9, 2018.
Prior Publication US 2022/0381976 A1, Dec. 1, 2022
Int. Cl. H01L 27/06 (2006.01); H01L 31/02 (2006.01); G02B 6/42 (2006.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 21/324 (2006.01)
CPC G02B 6/42 (2013.01) [G02B 6/122 (2013.01); G02B 6/12004 (2013.01); H01L 27/0617 (2013.01); H01L 31/02327 (2013.01); H01L 31/1864 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12169 (2013.01); H01L 21/324 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
at least one CMOS structure containing an electronic device formed from a first semiconductor material over a substrate;
at least one photonic device formed from a second semiconductor material disposed above the electronic device, the at least one photonic device having associated microwave activated dopant implants;
a first interlayer dielectric (ILD) metallization structure between the first semiconductor material and the second semiconductor material, configured to electrically couple the electronic device and the at least one photonic device; and
a second ILD metallization structure disposed above the at least one photonic device and electrically coupled to the first ILD metallization structure by a contact passing through the second semiconductor material.