US 11,885,744 B2
Sensor for lifetime plus spectral characterization
Gerard Schmid, Guilford, CT (US); Dajiang Yang, San Jose, CA (US); Eric A. G. Webster, Santa Clara, CA (US); Xin Wang, San Jose, CA (US); Todd Rearick, Cheshire, CT (US); Changhoon Choi, Palo Alto, CA (US); Ali Kabiri, Guilford, CT (US); and Kyle Preston, Guilford, CT (US)
Assigned to Quantum-Si Incorporated, Branford, CT (US)
Filed by Quantum-Si Incorporated, Branford, CT (US)
Filed on Jan. 14, 2021, as Appl. No. 17/149,310.
Claims priority of provisional application 62/961,143, filed on Jan. 14, 2020.
Prior Publication US 2021/0215605 A1, Jul. 15, 2021
Int. Cl. G01N 21/64 (2006.01)
CPC G01N 21/6428 (2013.01) [G01N 2021/6417 (2013.01); G01N 2021/6439 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a first photodetection region configured to generate first charge carriers in response to receiving incident photons in a first direction, the first photodetection region having a first depth in the first direction;
a second photodetection region having a second depth in the first direction that is different from the first depth, the second photodetection region configured to generate second charge carriers in response to receiving incident photons in the first direction;
a charge storage region configured to receive the first and/or second charge carriers from the first and/or second photodetection region; and
a readout region configured to receive the first and/or second charge carriers from the charge storage region.