US 11,885,695 B2
Sensor, stack-type sensor, and electronic device
Tomoko Katsuhara, Tokyo (JP); Yoshiaki Sakakura, Tokyo (JP); and Manami Miyawaki, Tokyo (JP)
Assigned to Sony Corporation, Tokyo (JP)
Appl. No. 17/277,431
Filed by Sony Corporation, Tokyo (JP)
PCT Filed Oct. 3, 2019, PCT No. PCT/JP2019/039155
§ 371(c)(1), (2) Date Mar. 18, 2021,
PCT Pub. No. WO2020/080127, PCT Pub. Date Apr. 23, 2020.
Claims priority of application No. 2018-197381 (JP), filed on Oct. 19, 2018.
Prior Publication US 2022/0034728 A1, Feb. 3, 2022
Int. Cl. G01L 1/14 (2006.01)
CPC G01L 1/146 (2013.01) 20 Claims
OG exemplary drawing
 
1. A sensor comprising:
a sensor electrode layer including a capacitive sensing unit;
a first reference electrode layer provided to face a first surface of the sensor electrode layer; and
a first elastic layer that is provided between the first reference electrode layer and the sensor electrode layer, and is configured to be elastically deformed by shear force added in an in-plane direction,
wherein at least one of the first reference electrode layer or the first elastic layer includes a first probe portion that is displaced in an in-plane direction in accordance with elastic deformation of the first elastic layer, and changes an electrostatic capacitance of the sensing unit, and
wherein an elasticity degree of the first elastic layer in an in-plane direction is smaller than an elasticity degree of the first elastic layer in a thickness direction.