US 11,885,040 B2
Single crystal epitaxial layer having a rhombohedral lattice
Hyun Jung Kim, Poquoson, VA (US); and Sang Hyouk Choi, Poquoson, VA (US)
Assigned to United States of America as represented by the Administrator of NASA, Washington, DC (US)
Filed by UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA, Washington, DC (US)
Filed on Dec. 8, 2020, as Appl. No. 17/115,101.
Application 17/115,101 is a division of application No. 15/358,987, filed on Nov. 22, 2016, granted, now 10,858,754.
Claims priority of provisional application 62/259,692, filed on Nov. 25, 2015.
Prior Publication US 2021/0123158 A1, Apr. 29, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 29/52 (2006.01); C30B 23/08 (2006.01); C30B 23/06 (2006.01); H01L 21/02 (2006.01)
CPC C30B 23/08 (2013.01) [C30B 23/066 (2013.01); C30B 29/52 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02532 (2013.01); H01L 21/02609 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A material comprising:
a single crystal epitaxial layer on top of a crystalline substrate, the single crystal epitaxial layer comprising one or more semiconductor materials, wherein 99% or more of the single crystal epitaxial layer has a rhombohedral lattice, wherein 99% or more of the rhombohedral lattice formed on the crystalline substrate has a [111] relative orientation, and the one or more semiconductor materials are Group IV semiconductor materials, and wherein the single crystal epitaxial layer is formed by molten target sputtering at a temperature below 600 degrees Celsius.