US 11,885,037 B2
Open Czochralski furnace for single crystal growth
Yu Wang, Meishan (CN); Weiming Guan, Meishan (CN); and Zhenxing Liang, Meishan (CN)
Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Meishan (CN)
Filed by MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Sichuan (CN)
Filed on Dec. 8, 2022, as Appl. No. 18/063,646.
Application 18/063,646 is a continuation of application No. 17/451,844, filed on Oct. 22, 2021, granted, now 11,572,634.
Application 17/451,844 is a continuation of application No. 17/035,741, filed on Sep. 29, 2020, granted, now 11,155,930, issued on Oct. 26, 2021.
Application 17/035,741 is a continuation of application No. 16/903,326, filed on Jun. 16, 2020, granted, now 10,844,514, issued on Nov. 24, 2020.
Application 16/903,326 is a continuation of application No. PCT/CN2019/101698, filed on Aug. 21, 2019.
Prior Publication US 2023/0113889 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 15/14 (2006.01); C30B 15/30 (2006.01)
CPC C30B 15/14 (2013.01) [C30B 15/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A temperature field device for crystal growth, comprising:
a first drum;
a second drum located inside the first drum;
a filler filled in a space between the first drum and the second drum;
a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum;
a first cover plate mounted on a top of the temperature field device and covering a top end of the first drum;
an observation unit mounted on the first cover plate, wherein the observation unit includes a through hole opened on the observation unit, and the through hole is configured for gas passing; and
a gas channel mounted on the observation unit, wherein a size of the gas channel is matched with a size of the through hole.