CPC C30B 15/06 (2013.01) [C30B 29/06 (2013.01); C30B 29/64 (2013.01); H01L 31/04 (2013.01)] | 41 Claims |
1. A method comprising:
providing a melt in a crucible, wherein the melt includes silicon;
forming a ribbon floating on the melt using a cold initializer facing an exposed surface of the melt, wherein the ribbon is single crystal silicon;
pulling the ribbon from the melt at a low angle off the melt surface, wherein the ribbon is formed at a same rate as the pulling; and
separating the ribbon from the melt at a wall of the crucible where a stable meniscus forms, wherein the ribbon has a thickness between a first surface and a second surface from 50 μm to 5 mm after the separating, wherein the second surface faces the melt prior to the separating, wherein the first surface and the second surface are opposite each other, wherein the ribbon includes a first region extending a first depth from the first surface toward the second surface, and wherein the first region has a reduced oxygen concentration relative to a bulk of the ribbon.
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