	US 11,885,022 B2
	Method of forming a film on a substrate by chemical vapor deposition
Chikara Mori, Annaka (JP); and Waichi Yamamura, Annaka (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Feb. 14, 2022, as Appl. No. 17/670,832.
Application 17/670,832 is a division of application No. 16/418,142, filed on May 21, 2019.
Claims priority of application No. 2018-098575 (JP), filed on May 23, 2018.
Prior Publication US 2022/0170153 A1, Jun. 2, 2022
Int. Cl. C23C 16/458 (2006.01); C23C 16/26 (2006.01); C23C 16/32 (2006.01); C23C 16/30 (2006.01)

CPC C23C 16/4588 (2013.01) [C23C 16/26 (2013.01); C23C 16/30 (2013.01); C23C 16/303 (2013.01); C23C 16/32 (2013.01); C23C 16/458 (2013.01)]

4 Claims

1. A method of forming a film on a surface of a substrate by chemical vapor deposition in a reaction container provided with at least a first holding member that is capable of holding the substrate and a second holding member that is capable of holding the substrate independently from the first holding member, the method comprising:

(a) forming a film on the surface of the substrate by chemical vapor deposition while holding the substrate by the first holding member;

(b) moving at least one holding member among the first holding member and the second holding member in at least one direction of the upward direction and the downward direction to hold the substrate by the second holding member instead of the first holding member; and