CPC C23C 16/45553 (2013.01) [C23C 16/18 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/45559 (2013.01); C23C 16/54 (2013.01)] | 18 Claims |
1. A method of depositing a transition metal from any of groups 4 to 6 on a substrate by a cyclical deposition process, the method comprising:
providing a substrate in a reaction chamber;
providing a transition metal precursor to the reaction chamber in a vapor phase; and
providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate; wherein
the transition metal precursor comprises a transition metal from any of groups 4 to 6,
the reactant comprises a group 14 element selected from Ge or Sn, and
at least 60% of transition metal is deposited as elemental metal.
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