US 11,885,020 B2
Transition metal deposition method
Charles Dezelah, Helsinki (FI); Jan Willem Maes, Wilrijk (BE); Elina Färm, Helsinki (FI); Saima Ali, Helsinki (FI); and Antti Niskanen, Uusimaa (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 17, 2021, as Appl. No. 17/554,009.
Claims priority of provisional application 63/129,024, filed on Dec. 22, 2020.
Prior Publication US 2022/0195599 A1, Jun. 23, 2022
Int. Cl. C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/54 (2006.01); C23C 16/18 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/18 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/45559 (2013.01); C23C 16/54 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of depositing a transition metal from any of groups 4 to 6 on a substrate by a cyclical deposition process, the method comprising:
providing a substrate in a reaction chamber;
providing a transition metal precursor to the reaction chamber in a vapor phase; and
providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate; wherein
the transition metal precursor comprises a transition metal from any of groups 4 to 6,
the reactant comprises a group 14 element selected from Ge or Sn, and
at least 60% of transition metal is deposited as elemental metal.