US 11,885,016 B2
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus and recording medium
Kazuhiro Harada, Toyama (JP); Shintaro Kogura, Toyama (JP); and Masayoshi Minami, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Jun. 17, 2022, as Appl. No. 17/843,436.
Application 17/843,436 is a continuation of application No. 16/987,065, filed on Aug. 6, 2020, granted, now 11,434,564.
Claims priority of application No. 2019-145220 (JP), filed on Aug. 7, 2019.
Prior Publication US 2022/0316058 A1, Oct. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/44 (2006.01)
CPC C23C 16/4404 (2013.01) [C23C 16/308 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method of processing a substrate comprising:
(a) forming a first film which contains carbon on the substrate by supplying a first processing gas to the substrate in a process container;
(b) forming a second film, which has a material different from a material of the first film, in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and
(c) forming a third film which contains carbon on the second film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.