US 11,885,014 B2
Transition metal nitride deposition method
Elina Färm, Helsinki (FI); Jan Willem Maes, Wilrijk (BE); Charles Dezelah, Helsinki (FI); and Shinya Iwashita, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jun. 24, 2022, as Appl. No. 17/849,077.
Claims priority of provisional application 63/216,076, filed on Jun. 29, 2021.
Prior Publication US 2022/0411919 A1, Dec. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/34 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/34 (2013.01) [C23C 16/458 (2013.01); C23C 16/45527 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method of depositing a transition metal nitride-containing material on a substrate by a cyclic deposition process, the method comprising:
providing a substrate in a reaction chamber;
providing an organometallic transition metal precursor to the reaction chamber in a vapor phase;
providing an auxiliary reactant to the reaction chamber in a vapor phase; and
providing a nitrogen precursor into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate;
wherein the transition metal precursor comprises a transition metal from any of groups 4 to 6 of the periodic table of elements,
wherein the auxiliary reactant comprises a halogen selected from a group consisting of bromine and iodine, and
wherein the auxiliary reactant comprises a 1,2-dihaloalkane or 1,2-dihaloalkene or 1,2-dihaloalkyne or 1,2-dihaloarene.