CPC C23C 16/26 (2013.01) [C01B 32/186 (2017.08); C23C 16/4485 (2013.01); C23C 16/463 (2013.01); G01N 27/308 (2013.01); H01M 4/583 (2013.01)] | 16 Claims |
1. A method of preparing a deposited graphene in the form of a continuous film comprising the steps of:
sealing a metal substrate and a carbon source in an ambient environment at ambient temperature to create a sealed ambient environment comprising a sealed ambient atmosphere;
heating the sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the carbon vapour comes into contact with a surface of the metal substrate;
maintaining the temperature at 875° C. or above for a time sufficient to form a graphene lattice and then cooling the metal substrate at a controlled rate to form a deposited graphene continuous film on the surface of the metal substrate that contacts the carbon vapour;
wherein the carbon source is a liquid or solid biomass, is derived from a biomass, or is a purified biomass;
wherein the entire carbon source is not in contact with the metal substrate;
wherein the method is free from the use of compressed or feedstock gases;
wherein the sealed ambient atmosphere consists of air at atmospheric pressure or a vacuum; and
wherein the metal is a transition metal substrate.
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