US 11,884,843 B2
Polishing composition, polishing method, and method of producing semiconductor substrate
Ryota Mae, Aichi (JP)
Assigned to FUJIMI INCORPORATED
Filed by FUJIMI INCORPORATED, Aichi (JP)
Filed on Sep. 1, 2022, as Appl. No. 17/901,412.
Application 17/901,412 is a continuation of application No. 17/191,988, filed on Mar. 4, 2021, abandoned.
Claims priority of application No. 2020-049621 (JP), filed on Mar. 19, 2020.
Prior Publication US 2023/0014626 A1, Jan. 19, 2023
Int. Cl. C09G 1/02 (2006.01); H01L 21/3105 (2006.01); B24B 7/22 (2006.01); C09K 3/14 (2006.01)
CPC C09G 1/02 (2013.01) [B24B 7/228 (2013.01); C09K 3/1409 (2013.01); H01L 21/31053 (2013.01)] 16 Claims
 
1. A polishing composition comprising:
abrasive grains; a basic inorganic compound; an anionic water-soluble polymer; and a dispersing medium,
wherein a zeta potential of the abrasive grains is negative,
wherein the abrasive grains are alumina, wherein more than 50% of the alumina is in a γ-phase,
an aspect ratio of the alumina is less than 1.1,
in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 2.0, and
the basic inorganic compound is an alkali metal salt.