US 11,884,546 B2
Multilayer body and electronic device
Fuminori Mitsuhashi, Osaka (JP); Yasunori Tateno, Osaka (JP); Masahiro Adachi, Osaka (JP); and Yoshiyuki Yamamoto, Osaka (JP)
Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
Appl. No. 17/421,057
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
PCT Filed Sep. 20, 2019, PCT No. PCT/JP2019/037057
§ 371(c)(1), (2) Date Jul. 7, 2021,
PCT Pub. No. WO2020/158041, PCT Pub. Date Aug. 6, 2020.
Claims priority of application No. 2019-012044 (JP), filed on Jan. 28, 2019.
Prior Publication US 2022/0064005 A1, Mar. 3, 2022
Int. Cl. C01B 32/182 (2017.01); H01L 29/16 (2006.01); H01L 29/76 (2006.01)
CPC C01B 32/182 (2017.08) [H01L 29/1606 (2013.01); H01L 29/7606 (2013.01); C01B 2204/04 (2013.01); C01B 2204/22 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A multilayer body comprising:
a base portion including silicon carbide and having a first major surface; and
a graphene film disposed on the first major surface and having an exposed surface, the exposed surface being a major surface located on a side opposite to a side on which the base portion is located, wherein
in an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry that uses bismuth ions as primary ions and uses cesium ions as sputtering ions,
detection intensities of C6 ions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from the exposed surface,
detection intensities of C3 ions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface,
detection intensities of SiC4 ions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface,
detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface,
detection intensities of Si2 ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface, and
a value obtained by dividing the maximum value of the detection intensities of SiC4 ions by an average of detection intensities of SiC4 ions associated with a region of the multilayer body is 1 or greater and 3.5 or less, the region having distances from the exposed surface in a thickness direction of the multilayer body of equal to or greater than 8 nm and 12 nm or less.