US 11,883,926 B2
Polishing pad, semiconductor fabricating device and fabricating method of semiconductor device
Takahiko Kawasaki, Nagoya Aichi (JP); Yukiteru Matsui, Nagoya Aichi (JP); and Akifumi Gawase, Kuwana Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on May 13, 2021, as Appl. No. 17/319,637.
Application 17/319,637 is a division of application No. 16/109,665, filed on Aug. 22, 2018, abandoned.
Claims priority of application No. 2018-045394 (JP), filed on Mar. 13, 2018.
Prior Publication US 2021/0260719 A1, Aug. 26, 2021
Int. Cl. B24B 37/26 (2012.01); B24B 37/24 (2012.01); B24B 53/017 (2012.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 23/532 (2006.01)
CPC B24B 37/26 (2013.01) [B24B 37/24 (2013.01); B24B 53/017 (2013.01); H01L 21/31055 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76805 (2013.01); H01L 21/76819 (2013.01); H01L 21/76895 (2013.01); H01L 23/53257 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising:
providing a polishing pad with a surface that has plural recess portions, wherein an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and an average density of the recess portions at one area of the surface is 1,300/mm2 or more;
after providing the polishing pad, holding the polishing pad on a pad polishing table;
after holding the polishing pad, supplying a polishing liquid to the surface of the polishing pad;
after supplying the polishing liquid, polishing a substrate using the polishing liquid in a gap between the polishing pad that includes the surface having the plural recess portions and the substrate; and
after polishing the substrate, dressing an upper surface of the polishing pad that includes the surface having the plural recess portion using a dresser.