US 11,882,696 B2
One-time programmable (OTP) memory device and method of operating an OTP memory device
Hoonsung Choi, Seoul (KR); and Jinwoo Park, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 22, 2021, as Appl. No. 17/558,884.
Claims priority of application No. 10-2021-0064624 (KR), filed on May 20, 2021.
Prior Publication US 2022/0375948 A1, Nov. 24, 2022
Int. Cl. G11C 17/16 (2006.01); H10B 20/20 (2023.01); G11C 17/14 (2006.01); G11C 17/18 (2006.01)
CPC H10B 20/20 (2023.02) [G11C 17/146 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01)] 8 Claims
OG exemplary drawing
1. A one-time programmable (OTP) memory device, comprising:
an access transistor including:
a gate structure on a substrate; and
first and second impurity regions at respective portions of the substrate adjacent to the gate structure;
a word line electrically connected to the gate structure;
a voltage line directly connected to the first impurity region;
a first well at an upper portion of the substrate, the first well being doped with impurities having a first conductivity type;
a first filling oxide layer on the first well;
a first semiconductor layer on the first filling oxide layer, the first semiconductor layer being doped with impurities having the first conductivity type and electrically connected to the second impurity region; and
a bit line electrically connected to the first well.