US 11,881,523 B2
Heterojunction bipolar transistors
Shesh Mani Pandey, Saratoga Springs, NY (US); Vibhor Jain, Williston, VT (US); and Judson R. Holt, Ballston Lake, NY (US)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on May 10, 2022, as Appl. No. 17/740,725.
Prior Publication US 2023/0369473 A1, Nov. 16, 2023
Int. Cl. H01L 29/737 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7371 (2013.01) [H01L 29/1004 (2013.01); H01L 29/66242 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A structure comprising:
a subcollector under a buried insulator layer;
a collector above the subcollector;
a base within the buried insulator layer;
an emitter above the base; and
contacts to the subcollector, the base and the emitter,
wherein the base comprises an extrinsic base and an intrinsic base at a same level, and
wherein the collector, the base and the emitter comprise a same width.