US 11,881,509 B2
Semiconductor device
Junbeom Park, Seoul (KR); Sangmo Koo, Seoul (KR); Minyi Kim, Hwaseong-si (KR); and Seokhyeon Yoon, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 9, 2021, as Appl. No. 17/396,942.
Claims priority of application No. 10-2020-0181225 (KR), filed on Dec. 22, 2020.
Prior Publication US 2022/0199775 A1, Jun. 23, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 29/1033 (2013.01); H01L 29/66553 (2013.01)] 20 Claims
OG exemplary drawing
1. A semiconductor device, comprising:
an active pattern on a substrate;
a source/drain pattern on the active pattern, the source/drain pattern including a bottom surface in contact with a top surface of the active pattern;
a channel pattern connected to the source/drain pattern;
a gate electrode extended to cross the channel pattern;
a fence insulating layer extended from a side surface of the active pattern to a lower side surface of the source/drain pattern; and
a pair of middle insulating patterns at both sides of the bottom surface of the source/drain pattern, the pair of middle insulating patterns being between the active pattern and the source/drain pattern in contact with an inner side surface of the fence insulating layer.