CPC H01L 21/76829 (2013.01) [H01L 21/7684 (2013.01); H01L 21/76816 (2013.01); H01L 23/5252 (2013.01); H01L 23/53209 (2013.01); H01L 21/76807 (2013.01)] | 16 Claims |
1. A semiconductor structure comprising:
a low-k dielectric material on top of a substrate;
two adjacent metal lines in the low-k dielectric material, wherein the two adjacent metal lines have a liner; and
a barrier layer contacting the liner and the low-k dielectric material, wherein a portion of the barrier layer extending laterally from each of the two adjacent metal lines embedding into the low-k dielectric material is an anti-fuse.
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