	US 11,881,399 B2
	Method of forming transition metal dichalcogenide thin film
Kyung-Eun Byun, Seongnam-si (KR); Hyoungsub Kim, Seoul (KR); Taejin Park, Yongin-si (KR); Hoijoon Kim, Daejeon (KR); Hyeonjin Shin, Suwon-si (KR); Wonsik Ahn, Bucheon-si (KR); Mirine Leem, Suwon-si (KR); and Yeonchoo Cho, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed on Sep. 21, 2022, as Appl. No. 17/949,418.
Application 17/949,418 is a continuation of application No. 16/928,560, filed on Jul. 14, 2020, granted, now 11,476,117.
Claims priority of application No. 10-2019-0085821 (KR), filed on Jul. 16, 2019.
Prior Publication US 2023/0024913 A1, Jan. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01)

CPC H01L 21/02568 (2013.01) [H01L 21/0262 (2013.01); H01L 21/02491 (2013.01); H01L 21/02658 (2013.01)]

19 Claims

1. A method of forming a transition metal dichalcogenide thin film on a substrate, the method comprising:

treating the substrate with a metal organic material, the metal organic material including a metal; and

providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize a transition metal dichalcogenide on the substrate, the transition metal precursor including a transition metal element and the chalcogen precursor including a chalcogen element, wherein

the treating the substrate provides the metal on a surface of the substrate,

the treating the substrate is performed without using H₂S and includes heat-treating a vicinity of the substrate at a process temperature of 300° C. to 500° C. to decompose the metal organic material.