CPC H01J 37/32119 (2013.01) [H01J 37/32183 (2013.01); H01J 37/32541 (2013.01); H01J 37/32651 (2013.01)] | 10 Claims |
1. A plasma processing apparatus, comprising:
a chamber having a dielectric window;
a coil placed outside the chamber so as to face the dielectric window;
a Faraday shield electrode having a plate shape and placed on a side of the chamber of the coil;
a first power source for supplying a high-frequency power of a first frequency to the coil;
a second power source for supplying a high-frequency power of a second frequency to the Faraday shield electrode, the second frequency being different from the first frequency;
a first matcher for matching a first impedance between the first power source and the coil;
a second matcher for matching a second impedance between the second power source and the Faraday shield electrode; and
a first frequency attenuation filter configured to allow transmission of the high-frequency power of the second frequency and inhibit transmission of the high-frequency power of the first frequency; and
a second frequency attenuation filter configured to allow transmission of the high-frequency power of the first frequency and inhibit transmission of the high-frequency power of the second frequency, wherein
the second matcher is connected to an output side of the second power source, and is connected to the Faraday shield electrode via the first frequency attenuation filter,
the second frequency attenuation filter is connected to an output side of the first power source, and
the first power source is connected to the coil via the first matcher placed on a coil side of the second frequency attenuation filter.
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