US 11,881,282 B2
Memory device with detection of out-of-range operating temperature
Yui Shimizu, San Jose, CA (US); Manik Advani, Fremont, CA (US); and Michele Piccardi, Cupertino, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 7, 2022, as Appl. No. 17/688,158.
Claims priority of provisional application 63/237,827, filed on Aug. 27, 2021.
Prior Publication US 2023/0063585 A1, Mar. 2, 2023
Int. Cl. G11C 7/04 (2006.01); G11C 7/10 (2006.01)
CPC G11C 7/04 (2013.01) [G11C 7/109 (2013.01); G11C 7/1063 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device comprising:
a memory die comprising:
an internally-powered thermometer comprising a first temperature measurement circuit to perform first operations comprising:
measuring a first measured operating temperature value of the memory die;
detecting the first measured operating temperature value satisfies one of a first condition or a second condition; and
generating a first signal indicating an out-of-range operating temperature of the memory die in response to one of the first condition or the second condition being satisfied by the first measured operating temperature value; and
an externally-powered thermometer comprising a second temperature measurement circuit to perform second operations comprising:
measuring a second measured operating temperature value of the memory die;
detecting the second measured operating temperature value satisfies one of the first condition or the second condition; and
generating a second signal indicating the out-of-range operating temperature of the memory die in response to one of the first condition or the second condition being satisfied by the second measured operating temperature value.