US 11,881,279 B2
Solid state drive device and method for fabricating solid state drive device
Ji Woon Park, Suwon-si (KR); and Jae-Sang Yun, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 2, 2022, as Appl. No. 17/879,479.
Application 17/879,479 is a continuation of application No. 16/885,832, filed on May 28, 2020, granted, now 11,423,950.
Claims priority of application No. 10-2019-0116505 (KR), filed on Sep. 23, 2019.
Prior Publication US 2022/0366940 A1, Nov. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 5/06 (2006.01); H01L 23/00 (2006.01); G11C 5/02 (2006.01)
CPC G11C 5/06 (2013.01) [G11C 5/025 (2013.01); H01L 24/45 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solid state drive (SSD) comprising:
a substrate;
a first buffer chip disposed on the substrate;
a second buffer chip disposed on the first buffer chip;
a plurality of first nonvolatile memory chips;
a plurality of second nonvolatile memory chips; and
a controller configured to transmit a control signal to the plurality of first nonvolatile memory chips and the plurality of second nonvolatile memory chips through a first channel,
wherein the plurality of first nonvolatile memory chips are disposed between the first buffer chip and the plurality of second nonvolatile memory chips,
wherein the plurality of first nonvolatile memory chips are connected to the second buffer chip and are not connected to the first buffer chip, and
wherein the plurality of second nonvolatile memory chips are connected to the first buffer chip and are not connected to the second buffer chip.