US 11,879,184 B2
Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate
Yusuke Mori, Osaka (JP); Masashi Yoshimura, Osaka (JP); Masayuki Imanishi, Osaka (JP); Shigeyoshi Usami, Osaka (JP); Junichi Takino, Osaka (JP); Masayuki Hoteida, Osaka (JP); and Shunichi Matsuno, Kyoto (JP)
Assigned to PANASONIC HOLDINGS CORPORATION, Osaka (JP)
Filed by Panasonic Holdings Corporation, Osaka (JP)
Filed on Jun. 24, 2022, as Appl. No. 17/848,927.
Claims priority of application No. 2021-106915 (JP), filed on Jun. 28, 2021.
Prior Publication US 2022/0411962 A1, Dec. 29, 2022
Int. Cl. C30B 35/00 (2006.01); C30B 25/16 (2006.01); C30B 29/40 (2006.01); C23C 16/455 (2006.01); C23C 16/30 (2006.01); C30B 25/14 (2006.01)
CPC C30B 25/165 (2013.01) [C23C 16/303 (2013.01); C23C 16/45561 (2013.01); C30B 25/14 (2013.01); C30B 29/406 (2013.01); C30B 35/00 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus comprising:
a raw material chamber that produces therein a group-III element oxide gas; and
a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate,
wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein
a diameter of the group-III element oxide gas supply inlet is denoted by “S”, wherein
a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L1”, wherein
a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M1”, wherein
a diameter of the seed substrate is denoted by “k”, and wherein
following Eqs. (1) to (4),
0°<θ<90°  (1)
0.21≤S/k≤0.35  (2)
1.17≤(L1+M1)/k≤1.55  (3)
k=2*(L1+M1)/tan θ+S  (4)
are satisfied.