US 11,878,906 B2
Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer device
Kailash Vijayakumar, KN Eindhoven (NL); Remco Henricus Wilhelmus Pijnenburg, AE Hoogeloon (NL); Willem Frederik Adrianus Besling, JN Eindhoven (NL); Sophie Guillemin, AE Eindhoven (NL); and Jörg Siegert, AE Eindhoven (NL)
Assigned to Sciosense B.V., AE Eindhoven (NL)
Filed by Sciosense B.V., AE Eindhoven (NL)
Filed on Sep. 30, 2022, as Appl. No. 17/937,123.
Application 17/937,123 is a division of application No. 17/288,267, granted, now 11,492,251, previously published as PCT/EP2019/080091, filed on Nov. 4, 2019.
Claims priority of application No. 18207101 (EP), filed on Nov. 19, 2018.
Prior Publication US 2023/0036935 A1, Feb. 2, 2023
Int. Cl. B81C 1/00 (2006.01)
CPC B81C 1/00476 (2013.01) [B81C 1/00595 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81C 2201/014 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/053 (2013.01)] 16 Claims
OG exemplary drawing
1. An integrated MEMS transducer device comprising:
a substrate body having a first electrode on a substrate;
an etch stop layer located on a surface of the substrate;
a suspended micro-electro-mechanical systems (MEMS) diaphragm with a second electrode;
an anchor structure with anchors connecting the MEMS diaphragm to the substrate body; and
a sacrificial layer in between the anchors of the anchor structure, the sacrificial layer comprising:
a first sub-layer of a first material, wherein the first sub-layer is arranged on the etch stop layer, and
a second sub-layer of a second material, wherein the second sub-layer is arranged on the first sub-layer, and
wherein the first and the second material are different materials.