US 12,207,381 B2
Extreme ultraviolet lithography system with heated tin vane bucket having a heated cover
Ssu-Yu Chen, New Taipei (TW); Shang-Chieh Chien, New Taipei (TW); and Li-Jui Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Apr. 4, 2022, as Appl. No. 17/712,373.
Application 17/712,373 is a continuation of application No. 16/787,947, filed on Feb. 11, 2020, granted, now 11,297,710.
Prior Publication US 2022/0225490 A1, Jul. 14, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H05G 2/00 (2006.01); G03F 7/00 (2006.01)
CPC H05G 2/005 (2013.01) [G03F 7/70033 (2013.01); G03F 7/70916 (2013.01); H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An extreme ultraviolet (EUV) light source, comprising:
a droplet generator to generate tin droplets;
a droplet catcher opposite to the droplet generator to catch the tin droplets;
a laser source to generate a laser beam striking the tin droplets to form a plasma;
a plurality of vanes arranged around an axis to collect tin debris created from the plasma; and
a bucket connected to the vanes and comprising:
a cover having an opening;
a vane bucket surrounded by the cover; and
a heater on an outer sidewall of the cover external to the cover and spaced apart from the droplet catcher.