US 12,206,793 B2
Signature verification method, memory storage device and memory control circuit unit
Aaron C Chuang, Taipei (TW); and Meng-Chang Chen, Miaoli County (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Aug. 1, 2022, as Appl. No. 17/878,084.
Claims priority of application No. 111127009 (TW), filed on Jul. 19, 2022.
Prior Publication US 2024/0031165 A1, Jan. 25, 2024
Int. Cl. H04L 9/32 (2006.01); G06F 3/06 (2006.01)
CPC H04L 9/3247 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A signature verification method, configured for a memory storage device, the signature verification method comprising:
reading first data, signature information, and first verification information from the memory storage device;
performing a first verification operation according to the signature information and the first verification information;
generating second verification information according to the first data;
performing a second verification operation according to the first verification information and the second verification information; and
performing a corresponding process on the first data according to an operation result of the first verification operation and an operation result of the second verification operation.