US 12,206,399 B2
Debounced solid state switching device
Oliver Daniel Wilson, Fridley, MN (US)
Assigned to Cummins Inc., Columbus, IN (US)
Appl. No. 17/922,556
Filed by Cummins Inc., Columbus, IN (US)
PCT Filed May 14, 2020, PCT No. PCT/US2020/032844
§ 371(c)(1), (2) Date Oct. 31, 2022,
PCT Pub. No. WO2021/230870, PCT Pub. Date Nov. 18, 2021.
Prior Publication US 2023/0170896 A1, Jun. 1, 2023
Int. Cl. H03K 17/567 (2006.01)
CPC H03K 17/567 (2013.01) 11 Claims
OG exemplary drawing
 
1. A switching device, comprising:
a controller;
a first insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal, the second connection terminal comprising a first contact to selectively place the second connection terminal of the first insulated-gate bipolar transistor in communication with the first connection terminal of the first insulated-gate bipolar transistor to close a module circuit of the first insulated-gate bipolar transistor; and
a second insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal, the second connection terminal of the second insulated-gate bipolar transistor comprising a second contact to selectively place the second connection terminal of the second insulated-gate bipolar transistor in communication with the first connection terminal of the second insulated-gate bipolar transistor to close a module circuit of the second insulated-gate bipolar transistor;
a third insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal; and
a fourth insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal;
wherein the first connection terminal of the first insulated-gate bipolar transistor is communicatively coupled to the first connection terminal of the second insulated-gate bipolar transistor and the second connection terminal of the first insulated-gate bipolar transistor is communicatively coupled to the second connection terminal of the second insulated-gate bipolar transistor; and
the second connection terminal of the third insulated-gate bipolar transistor comprises a third contact to place the second connection terminal of the third insulated-gate bipolar transistor in communication with the first connection terminal of the third insulated-gate bipolar transistor to close a module circuit of the third insulated-gate bipolar transistor; and
the second connection terminal of the fourth insulated-gate bipolar transistor comprises a fourth contact to place the second connection terminal of the fourth insulated-gate bipolar transistor in communication with the first connection terminal of the fourth insulated-gate bipolar transistor to close a module circuit of the fourth insulated-gate bipolar transistor.