US 12,206,047 B2
Light-emitting diode chip and ultraviolet light-emitting device including the same
Poyang Chang, Xiamen (CN); Linrong Cai, Xiamen (CN); Shao-Hua Huang, Xiamen (CN); Liqin Zhu, Xiamen (CN); and Shuangliang Liu, Xiamen (CN)
Assigned to Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen (CN)
Filed by Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen (CN)
Filed on Feb. 22, 2022, as Appl. No. 17/677,712.
Claims priority of application No. 202120438721.6 (CN), filed on Mar. 1, 2021.
Prior Publication US 2022/0278252 A1, Sep. 1, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 33/22 (2010.01); H01L 33/38 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/22 (2013.01) [H01L 33/382 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/32 (2013.01); H01L 2933/0091 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A light-emitting diode (LED) chip, comprising:
a substrate which has opposing first and second surfaces;
an epitaxial structure which includes a first semiconductor layer, an active layer and a second semiconductor layer that sequentially disposed on said first surface in such order;
a conductive bonding layer which is disposed between said substrate and said epitaxial structure, and which is electrically connected to said second semiconductor layer; and
an electrode contact layer, a metallic reflective layer, a current blocking layer and a transparent conducting layer that are sequentially disposed on said conductive bonding layer opposite to said substrate in such order;
wherein said second semiconductor layer has a light-emitting surface opposite to said active layer, and is formed with a microstructure on said light-emitting surface, said microstructure including a plurality of first protrusions and a plurality of second protrusions, said first protrusion being separately disposed on said light-emitting surface, said second protrusions being disposed on said first protrusions and on said light-emitting surface between any two adjacent ones of said first protrusions;
wherein said transparent conducting layer is located below said first semiconductor layer opposite to said active layer and is electronically connected to said first semiconductor layer; and
wherein said current blocking layer is formed with a plurality of openings, said metallic reflective layer filling said openings to be electronically connected to said transparent conducting layer.