	US 12,206,040 B2
	Method for homogenising the cross-section of nanowires for light-emitting diodes
Bruno-Jules Daudin, Grenoble (FR); Walf Chikhaoui, Voiron (FR); Marion Gruart, Saint-Egreve (FR); and Philippe Gilet, Teche (FR)
Assigned to Aledia, Echirolles (FR); Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR); and Universite Grenoble Alpes, Saint Martin d'Heres (FR)
Appl. No. 17/619,820
Filed by Aledia, Echirolles (FR); Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR); and Universite Grenoble Alpes, Saint Martin d'Heres (FR)
PCT Filed Jun. 25, 2020, PCT No. PCT/EP2020/067959 § 371(c)(1), (2) Date Dec. 16, 2021, PCT Pub. No. WO2020/260541, PCT Pub. Date Dec. 30, 2020.
Claims priority of application No. 1906898 (FR), filed on Jun. 25, 2019.
Prior Publication US 2022/0359782 A1, Nov. 10, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/30 (2010.01); H01L 33/18 (2010.01)

CPC H01L 33/0062 (2013.01) [H01L 33/30 (2013.01); H01L 33/18 (2013.01)]

12 Claims

1. Method of manufacturing an optoelectronic device comprising light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion, and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area, characterized in that the upper portions are formed by vapor deposition at a pressure smaller than 1.33 mPa.