	US 12,206,039 B2
	Three-dimensional photoconductive transducer for terahertz signals or picosecond electrical pulses
Christopher Bauerle, Grenoble (FR); Jean-François Roux, Le Bourget du Lac (FR); and Giorgos Georgiou, Grenoble (FR)
Assigned to CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); INSTITUT POLYTECHNIQUE DE GRENOBLE, Grenoble (FR); UNIVERSITE SAVOIE MONT BLANC, Chambèry (FR); and UNIVERSITE GRENOBLE ALPES, Saint-Martin-d'Yères (FR)
Appl. No. 17/782,987
Filed by CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); INSTITUT POLYTECHNIQUE DE GRENOBLE, Grenoble (FR); UNIVERSITE SAVOIE MONT BLANC, Chambèry (FR); and UNIVERSITE GRENOBLE ALPES, Saint-Martin-d'Yères (FR)
PCT Filed Dec. 10, 2020, PCT No. PCT/EP2020/085625 § 371(c)(1), (2) Date Jun. 6, 2022, PCT Pub. No. WO2021/116339, PCT Pub. Date Jun. 17, 2021.
Claims priority of application No. 19306646 (EP), filed on Dec. 13, 2019.
Prior Publication US 2023/0026900 A1, Jan. 26, 2023
Int. Cl. H01L 31/12 (2006.01); H01L 31/0224 (2006.01); H01L 31/0304 (2006.01); H01L 31/0384 (2006.01); H01L 31/18 (2006.01)

CPC H01L 31/125 (2013.01) [H01L 31/022475 (2013.01); H01L 31/0304 (2013.01); H01L 31/0384 (2013.01); H01L 31/184 (2013.01); H01L 31/1884 (2013.01)]

10 Claims

1. A Photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain, wherein photoconductive transducer comprises—a three-dimensional structure that comprises a first planar electrode (E1), second planar electrode (E2) parallel to the first planar electrode, and an array of identical nano-columns (C) embedded in a layer of resist (R) situated between the first and the second planar electrodes, the resist and the second planar electrode being transparent at a given wavelength in the visible or in the near infrared region of the electromagnetic spectrum, the height of the nano-columns as well as the thickness of the resist ranging between 100 nanometres and 400 nanometres, the width of the nano-columns being between 100 nanometres and 400 nanometres, the distance between two consecutive nano-columns being between 300 nanometres and 500 nanometres, the nano-columns made of a III-V semiconductor and the top part of each nano-column comprising a metal contact (CE) that is electrically connected to the second electrode.