US 12,206,033 B2
Methods and apparatuses for improved barrier and contact layers in infrared detectors
Edward H. Aifer, Arlington, VA (US); Jerry R. Meyer, Catonsville, MD (US); Chadwick Lawrence Canedy, Washington, DC (US); Igor Vurgaftman, Severna Park, MD (US); and Jill A. Nolde, Takoma Park, MD (US)
Assigned to The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed by The Government of the United States, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed on Aug. 2, 2022, as Appl. No. 17/879,440.
Application 17/879,440 is a continuation of application No. 16/525,160, filed on Jul. 29, 2019, granted, now 11,404,591.
Claims priority of provisional application 62/711,019, filed on Jul. 27, 2018.
Prior Publication US 2023/0178667 A1, Jun. 8, 2023
Int. Cl. H01L 31/0352 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/035236 (2013.01) [H01L 31/03046 (2013.01); H01L 31/109 (2013.01); H01L 31/1844 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An infrared detector, comprising:
an absorber region formed from a first semiconductor material with a first lattice constant, wherein the first semiconductor material produces charge carriers in response to infrared light, and wherein the first semiconductor material is a ternary alloy of the form AB1-xCx, where A is a first material, B is a second material, and C is a third material;
a barrier region disposed on the absorber region, wherein the barrier region is a superlattice comprising: (i) a plurality of first barrier region layers comprising the first semiconductor material, and (ii) a plurality of second barrier region layers comprising a second semiconductor material that is different from the first semiconductor material, wherein the plurality of first barrier region layers are alternatingly arranged with the plurality of second barrier region layers; and
a contact region disposed on the barrier region, wherein the contact region is another superlattice comprising: (i) a plurality of first contact region layers comprising the first semiconductor material, and (ii) a plurality of second contact region layers comprising the second semiconductor material, wherein the plurality of first contact region layers are alternatingly arranged with the plurality of second contact region layers,
wherein the second semiconductor material is lattice matched to the first semiconductor material resulting in the absorber region, the barrier region, and the contact region being unstrained.