US 12,206,007 B2
Semiconductor device and method for fabricating the same
Wen-Wen Zhang, Changhua County (TW); Kun-Chen Ho, Tainan (TW); Chun-Lung Chen, Tainan (TW); Chung-Yi Chiu, Tainan (TW); and Ming-Chou Lu, Pingtung County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jul. 19, 2022, as Appl. No. 17/868,753.
Claims priority of application No. 111122678 (TW), filed on Jun. 17, 2022.
Prior Publication US 2023/0411489 A1, Dec. 21, 2023
Int. Cl. H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/4991 (2013.01) [H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a gate structure on a substrate;
a source/drain region adjacent to the gate structure;
an interlayer dielectric (ILD) layer around the gate structure;
a contact plug in the ILD layer and adjacent to the gate structure;
an air gap around the contact plug;
a stop layer on the ILD layer and the contact plug; and
a metal interconnection on and overlapping the contact plug and the air gap.