US 12,206,000 B2
High electron mobility transistor and method for forming the same
Chih-Tung Yeh, Taoyuan (TW); Chun-Liang Hou, Hsinchu County (TW); Wen-Jung Liao, Hsinchu (TW); Chun-Ming Chang, Kaohsiung (TW); Yi-Shan Hsu, Taipei (TW); and Ruey-Chyr Lee, Taichung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jan. 18, 2024, as Appl. No. 18/416,764.
Application 18/416,764 is a division of application No. 18/199,359, filed on May 18, 2023.
Application 18/199,359 is a continuation of application No. 17/029,075, filed on Sep. 23, 2020, granted, now 11,695,049, issued on Jul. 4, 2023.
Claims priority of application No. 202010799660.6 (CN), filed on Aug. 11, 2020.
Prior Publication US 2024/0162313 A1, May 16, 2024
Int. Cl. H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/4175 (2013.01) [H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/0684 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for forming a high electron mobility transistor,
comprising:
providing a substrate;
forming a mesa structure on the substrate, wherein the mesa structure comprises a channel layer, a barrier layer disposed on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction, the first direction and the second direction are perpendicular;
forming a passivation layer covering the substrate and the mesa structure;
forming at least a first opening, wherein the first opening penetrates through the passivation layer and exposes the barrier layer, and in a top view, the first opening exposes the two opposite first edges of the mesa structure without exposing the two opposite second edges of the mesa structure;
forming a plurality of second openings, wherein the plurality of second openings are connected to a bottom surface of the first opening and penetrate through the barrier layer and a portion of the channel layer; and
forming a metal layer in the first opening and the plurality of second openings thereby forming a contact structure on the mesa structure; and
forming a gate structure on the mesa structure, wherein in the top view, the gate structure is at a side of the contact structure along the first direction, and extends lengthwise along the second direction.