CPC H01L 29/4175 (2013.01) [H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/0684 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01)] | 6 Claims |
1. A method for forming a high electron mobility transistor,
comprising:
providing a substrate;
forming a mesa structure on the substrate, wherein the mesa structure comprises a channel layer, a barrier layer disposed on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction, the first direction and the second direction are perpendicular;
forming a passivation layer covering the substrate and the mesa structure;
forming at least a first opening, wherein the first opening penetrates through the passivation layer and exposes the barrier layer, and in a top view, the first opening exposes the two opposite first edges of the mesa structure without exposing the two opposite second edges of the mesa structure;
forming a plurality of second openings, wherein the plurality of second openings are connected to a bottom surface of the first opening and penetrate through the barrier layer and a portion of the channel layer; and
forming a metal layer in the first opening and the plurality of second openings thereby forming a contact structure on the mesa structure; and
forming a gate structure on the mesa structure, wherein in the top view, the gate structure is at a side of the contact structure along the first direction, and extends lengthwise along the second direction.
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