| CPC H01L 28/20 (2013.01) | 20 Claims |
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1. A method of forming a semiconductor device, the method comprising:
forming a plurality of isolation regions on a semiconductor substrate;
forming a protective layer in a resistor region of the semiconductor substrate;
after forming the protective layer, etching a gate dielectric layer to form first and second gate dielectric layers of a transistor in a transistor region of the semiconductor substrate;
removing the protective layer;
forming first and second dummy gate stacks over the first and second gate dielectric layers, respectively;
forming a resistor in the resistor region;
forming third and fourth dummy gate stacks over the resistor; and
replacing each of the first, second, third, and fourth dummy gate stacks with a conductive material.
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