US 12,205,970 B2
Image sensor pixel with deep trench isolation structure
Gang Chen, San Jose, CA (US)
Assigned to MAGVISION SEMICONDUCTOR (BEIJING) INC., Beijing (CN)
Filed by MAGVISION SEMICONDUCTOR (BEIJING) INC., Beijing (CN)
Filed on Sep. 16, 2021, as Appl. No. 17/476,989.
Prior Publication US 2023/0082312 A1, Mar. 16, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14623 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming an image sensor, comprising:
receiving a workpiece comprising a first isolation structure formed in a front side of a substrate;
forming a trench extending through the first isolation structure and a portion of the substrate;
performing a thermal oxidization to the workpiece, thereby forming a dielectric liner to line the trench;
after the forming of the dielectric liner, depositing a conductive layer conformally over the workpiece, wherein the conductive layer comprises a first portion in direct contact with the dielectric liner and a second portion in direct contact with the first isolation structure; and
depositing a dielectric fill layer over the conductive layer to fill the trench.