US 12,205,969 B2
Metal shielding structure to reduce crosstalk in a pixel array
Yu-Ching Chou, Taipei (TW); and Ya-Chun Teng, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 15, 2021, as Appl. No. 17/248,258.
Prior Publication US 2022/0231065 A1, Jul. 21, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14623 (2013.01) [H01L 27/14607 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A pixel array, comprising:
a plurality of pixel sensors including a plurality of photodiodes;
an oxide layer over the plurality of pixel sensors;
a grid structure, between the plurality of pixel sensors, comprising a metal layer that has a first plurality of openings, in a first portion of the pixel array that is over the plurality of photodiodes, and that intersects with the oxide layer in a second portion of the pixel array that is outside of the plurality of photodiodes;
a metal shielding structure, comprising a plurality of extension regions and a plurality of second openings, configured to prevent at least a portion of optical crosstalk between adjacent pixel sensors of the plurality of pixel sensors,
wherein the plurality of extension regions define the plurality of second openings, and the plurality of second openings are over the plurality of photodiodes and within the plurality of first openings, and
wherein the metal shielding structure intersects with the oxide layer, in the first portion of the pixel array that is over the plurality of photodiodes, and with the metal layer in the second portion of the pixel array that is outside of the plurality of photodiodes; and
a passivation layer intersecting with the grid structure, in the second portion of the pixel array that is outside of the plurality of photodiodes, and with the oxide layer in the first portion of the pixel array that is over the plurality of photodiodes.