US 12,205,952 B2
Semiconductor device
Gihee Cho, Yongin-si (KR); Sanghyuck Ahn, Daegu (KR); Hyun-Suk Lee, Suwon-si (KR); Jungoo Kang, Seoul (KR); Jin-Su Lee, Hwaseong-si (KR); and Hongsik Chae, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 13, 2023, as Appl. No. 18/539,062.
Application 18/539,062 is a continuation of application No. 17/852,040, filed on Jun. 28, 2022, granted, now 11,881,482.
Claims priority of application No. 10-2022-0002924 (KR), filed on Jan. 7, 2022.
Prior Publication US 2024/0113122 A1, Apr. 4, 2024
Int. Cl. H01L 27/10 (2006.01); G11C 8/14 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01L 27/101 (2013.01) [G11C 8/14 (2013.01); H01L 28/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
forming a mold structure on a substrate and the mold structure includes a mold layer and a supporting layer;
performing etching process on the mold structure to form conductive hole in the mold structure; and
forming a bottom electrode in the conductive hole,
wherein forming the bottom electrode comprises;
forming a first portion of the bottom electrode in the conductive hole, the first portion including a seam that is externally exposed, and
forming a second portion on the first portion, the exposed seam closed by the second portion.