| CPC H01L 27/0688 (2013.01) [H01L 23/147 (2013.01); H01L 23/5385 (2013.01); H01L 25/0657 (2013.01)] | 20 Claims |
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1. A method for forming an interfacial structure, comprising:
forming a first structure, comprising:
forming an opening in a dielectric layer;
forming a conductive feature in the opening;
selectively forming a first cap layer on the conductive feature by a first process; and then
selectively forming a first thermal conductive layer on the dielectric layer by a second process different from the first process, wherein a surface of the first thermal conductive layer and a surface of the first cap layer are substantially co-planar;
forming a second structure; and
bonding the second structure to the first structure.
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