US 12,205,941 B2
Integrated circuit and method of forming the same
Kuang-Ching Chang, Hsinchu (TW); Jung-Chan Yang, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); and Chih-Liang Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 22, 2022, as Appl. No. 17/727,338.
Claims priority of provisional application 63/225,118, filed on Jul. 23, 2021.
Prior Publication US 2023/0022333 A1, Jan. 26, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 23/522 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a set of active regions extending in a first direction, and being on a first level of a substrate;
a first set of contacts extending in a second direction different from the first direction, being on a second level different from the first level, and overlapping the set of active regions, the first set of contacts overlapping a first cell boundary and a second cell boundary of the integrated circuit that extends in the second direction;
a set of gates extending in the second direction, being on a third level different from the first level, the set of gates overlapping the set of active regions, and being between the first cell boundary and the second cell boundary;
a first set of power rails extending in the first direction, configured to supply a first supply voltage or a second supply voltage, and being on a fourth level different from the first level, the second level and the third level, the first set of power rails overlapping at least the first set of contacts; and
a first set of vias between the first set of contacts and the first set of power rails, the first set of vias electrically coupling the first set of contacts and the first set of power rails together,
wherein the set of active regions extend continuously through the first cell boundary and the second cell boundary.