US 12,205,921 B2
Heterogenous bonding layers for direct semiconductor bonding
Kuang-Wei Cheng, Hsinchu (TW); and Chyi-Tsong Ni, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 31, 2021, as Appl. No. 17/446,549.
Prior Publication US 2023/0065793 A1, Mar. 2, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 24/83 (2013.01) [H01L 24/32 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/0509 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/0549 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first bonding layer on a surface of a first semiconductor device;
forming a second bonding layer on a surface of a second semiconductor device,
wherein a chemical composition of the first bonding layer is different from a chemical composition of the second bonding layer to promote bonding between the first semiconductor device and the second semiconductor device, wherein the chemical composition of the first bonding layer comprises a hydroxy-containing silicon dioxide; and
performing an annealing operation to bond the first semiconductor device with the second semiconductor device via the first bonding layer and the second bonding layer.