US 12,205,907 B2
Seal ring structures
Yu-Bey Wu, Hsinchu (TW); Yen-Lian Lai, Hsinchu (TW); Yung Feng Chang, Hsinchu (TW); Jiun-Ming Kuo, Taipei (TW); and Yuan-Ching Peng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Dec. 20, 2021, as Appl. No. 17/555,995.
Prior Publication US 2023/0197640 A1, Jun. 22, 2023
Int. Cl. H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 23/562 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) chip, comprising:
a circuit region; and
a seal ring region surrounding the circuit region, the seal ring region comprising:
a first active region extending lengthwise in a first direction, and
a first gate structure disposed on the first active region, the first gate structure extending lengthwise in a second direction that is tilted from the first direction, wherein the first direction and the second direction form a tilted angle therebetween, and wherein the titled angle is non-orthogonal.