| CPC H01L 23/562 (2013.01) [H01L 29/2003 (2013.01)] | 13 Claims |
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1. A semiconductor structure, comprising:
a single crystal silicon wafer comprising a device region, a peripheral region surrounding the device region, a bevel region surrounding the peripheral region, and a transition region between the peripheral region and the device region;
an epitaxial layer directly on a surface of the single crystal silicon wafer, comprising:
a first portion on the transition region;
a second portion on the device region;
a third portion on the peripheral region; and
a fourth portion on the bevel region, wherein the first portion has a poly-crystal structure, and the second portion and the third portion respectively have a single crystal structure; and
an amorphous silicon layer in the single crystal silicon wafer and directly under the first portion of the epitaxial layer, wherein a bottom surface and a side surface of the amorphous layer directly contact the single crystal silicon wafer.
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