US 12,205,896 B2
Contact via formation
Lin-Yu Huang, Hsinchu (TW); Li-Zhen Yu, Hsinchu (TW); Chia-Hao Chang, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); Kuan-Lun Cheng, Hsin-Chu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/360,901.
Application 18/360,901 is a continuation of application No. 17/682,884, filed on Feb. 28, 2022, granted, now 11,798,884.
Application 17/682,884 is a continuation of application No. 16/888,381, filed on May 29, 2020, granted, now 11,264,326, issued on Mar. 1, 2022.
Prior Publication US 2023/0369216 A1, Nov. 16, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/5283 (2013.01) [H01L 21/32139 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a source/drain contact sandwiched between two dielectric features along a first direction;
forming a patterned hard mask over the source/drain contact, the patterned hard mask resembling an island disposed over a center portion of the source/drain contact;
etching the source/drain contact using the patterned hard mask as an etch mask to form a contact via; and
depositing a dielectric layer between the contact via and the two dielectric features.