US 12,205,891 B2
Methods of manufacturing fusible structures
Shao-Ting Wu, Hsinchu (TW); Meng-Sheng Chang, Hsinchu (TW); Shao-Yu Chou, Hsinchu (TW); and Chung-I Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/885,321.
Application 17/885,321 is a division of application No. 17/229,345, filed on Apr. 13, 2021, granted, now 11,658,114.
Claims priority of provisional application 63/092,914, filed on Oct. 16, 2020.
Prior Publication US 2022/0384339 A1, Dec. 1, 2022
Int. Cl. H01L 23/525 (2006.01); H10B 20/25 (2023.01); H01L 21/3213 (2006.01)
CPC H01L 23/5256 (2013.01) [H10B 20/25 (2023.02); H01L 21/32139 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a fusible structure, the method comprising:
forming a metal line that extends in a first direction, the forming a metal line including:
configuring a mask such that the metal line has a first portion that is between a second portion and a third portion; and
using an optical proximity correction technique with the mask so that the first portion has a first thickness that is thinner than a second thickness of each of the second portion and the third portion; and
forming a first dummy structure proximal to the metal line but separated therefrom by a gap and aligned with the first portion relative to the first direction.