US 12,205,861 B2
Manufacturing method of semiconductor package including forming cavity in circuit substrate without exposing floor plate
Meng-Liang Lin, Hsinchu (TW); Po-Yao Chuang, Hsin-Chu (TW); Te-Chi Wong, Hsinchu (TW); Shuo-Mao Chen, New Taipei (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 2, 2023, as Appl. No. 18/363,742.
Application 18/363,742 is a division of application No. 17/462,000, filed on Aug. 31, 2021, granted, now 11,908,764.
Prior Publication US 2023/0386956 A1, Nov. 30, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/3192 (2013.01) [H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 23/481 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/96 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method, comprising:
forming a redistribution layer;
bonding first semiconductor dies onto a first surface of the redistribution layer;
molding the first semiconductor dies with a molding compound;
bonding a second semiconductor die onto a second surface of the redistribution layer opposite to the first surface;
providing a circuit substrate having a dielectric material and a floor plate embedded in the dielectric material;
forming a cavity in the circuit substrate by removing a portion of the dielectric material without exposing the floor plate;
connecting the circuit substrate with the redistribution layer and accommodating the second semiconductor die in the cavity; and
dispensing an underfill into the cavity to fill up the cavity and surround the second semiconductor die and fill between the circuit substrate and the redistribution layer.