CPC H01L 23/3128 (2013.01) [H01L 23/142 (2013.01); H01L 23/3114 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/10 (2013.01); H05K 1/111 (2013.01)] | 20 Claims |
1. A method of forming a semiconductor device structure, the method comprising:
attaching a plurality of pins to a first substrate, the first substrate comprising a first plurality of pads, the plurality of pins being attached to a first subset of the first plurality of pads, wherein the pins of the plurality of pins are discontinuous and spaced apart from each other; and
attaching the first substrate to a second substrate, the second substrate comprising a second plurality of pads, the second plurality of pads being electrically coupled to a second subset of the first plurality of pads, wherein the plurality of pins is between the first substrate and the second substrate.
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