US 12,205,856 B2
Semiconductor structure including interconnection to probe pad with probe mark
Hsien-Wei Chen, Hsinchu (TW); Ching-Jung Yang, Taoyuan (TW); and Jie Chen, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 8, 2023, as Appl. No. 18/314,126.
Application 18/314,126 is a continuation of application No. 17/721,326, filed on Apr. 14, 2022, granted, now 11,682,594.
Application 17/721,326 is a continuation of application No. 17/133,665, filed on Dec. 24, 2020, granted, now 11,335,610, issued on May 17, 2022.
Application 17/133,665 is a continuation of application No. 16/440,998, filed on Jun. 14, 2019, granted, now 10,879,138, issued on Dec. 29, 2020.
Prior Publication US 2023/0274988 A1, Aug. 31, 2023
Int. Cl. H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01)
CPC H01L 22/32 (2013.01) [H01L 22/20 (2013.01); H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first die comprising an interconnect structure and a pad structure disposed on and electrically connected to the interconnect structure, wherein the pad structure comprises a metal pad and a dielectric cap on the metal pad, and the pad structure has a first probe mark recessed from a top surface of the dielectric cap into a top surface of the metal pad, wherein the first probe mark extends from the top surface of the dielectric cap, via a sidewall of the dielectric cap, onto the top surface of the metal pad, and the sidewall of the dielectric cap is connected to the top surface of the dielectric cap being recessed therefrom;
a protective layer conformally covering the pad structure, wherein the protective layer is in contact with the probe mark; and
a first bonding structure disposed on the first die, wherein the first bonding structure at least comprises a first bonding metal layer penetrating through the protective layer and the dielectric cap to contact the pad structure having the first probe mark.