	US 12,205,850 B2
	Gate structures for tuning threshold voltage
Yen-Yu Chen, Taichung (TW); and Chung-Liang Cheng, Changhua County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 5, 2022, as Appl. No. 17/810,799.
Application 17/810,799 is a division of application No. 16/925,893, filed on Jul. 10, 2020, granted, now 11,610,822.
Claims priority of provisional application 62/968,482, filed on Jan. 31, 2020.
Prior Publication US 2022/0336291 A1, Oct. 20, 2022
Int. Cl. H01L 21/8238 (2006.01); H01L 21/033 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01)

CPC H01L 21/823857 (2013.01) [H01L 21/0337 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 27/0922 (2013.01); H01L 29/0673 (2013.01); H01L 29/4966 (2013.01); H01L 29/7851 (2013.01)]

20 Claims

1. A method, comprising:

forming a mask layer directly on a first interfacial layer (IL) for a first gate structure and directly on a second IL for a second gate structure;

patterning the mask layer to remove a portion of the mask layer formed over the first IL;

forming a dipole layer, wherein a first portion of the dipole layer is formed directly on the first IL, and wherein a second portion of the dipole layer is formed on a remaining portion of the mask layer disposed over the second IL;

performing a dipole drive-in process to drive a material of the dipole layer into the first IL and into the second IL

removing the dipole layer and removing the remaining portion of the mask layer after the dipole drive-in process has been performed;

forming a gate dielectric layer directly on the first IL and on the second IL;

forming one or more work function metal layers over the gate dielectric layer; and

forming a fill metal over the one or more work function metal layers.