US 12,205,834 B2
Temperature calibration methods for semiconductor machine
ShihChieh Lin, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Appl. No. 17/310,761
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
PCT Filed Mar. 10, 2021, PCT No. PCT/CN2021/079968
§ 371(c)(1), (2) Date Aug. 20, 2021,
PCT Pub. No. WO2021/185133, PCT Pub. Date Sep. 23, 2021.
Claims priority of application No. 202010198897.9 (CN), filed on Mar. 19, 2020.
Prior Publication US 2022/0319883 A1, Oct. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G01K 15/00 (2006.01); G01K 7/01 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/67248 (2013.01) [G01K 7/01 (2013.01); G01K 15/005 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A temperature calibration method for a semiconductor machine, comprising following steps:
presetting an assigned temperature;
providing at least one temperature calibration sheet, the temperature calibration sheet comprising a transistor having a voltage-temperature characteristic curve corresponding to a set current;
placing the temperature calibration sheet in a measurement region of the semiconductor machine;
energizing the temperature calibration sheet at an energizing current being the same as the set current, and measuring a voltage of the transistor;
obtaining a temperature of the transistor according to the voltage-temperature characteristic curve of the transistor by using the voltage as a known parameter, the temperature being a temperature of the measurement region of the semiconductor machine;
comparing the temperature with the assigned temperature to get a difference; and
adjusting a temperature device of the semiconductor machine according to the difference.